The relentless pursuit of higher chip performance, lower power consumption, and smaller form factors has driven innovations in semiconductor materials. Traditional silicon-based chips are reaching their physical limits, prompting researchers and manufacturers to explore alternative materials that can overcome these constraints.

One key area of innovation is the use of compound semiconductors, such as gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). These materials offer superior electrical properties compared to silicon, including higher electron mobility and breakdown voltage, making them ideal for high-frequency, high-power applications. For example, GaN chips are used in 5G base stations, electric vehicle (EV) chargers, and radar systems, as they can operate at higher temperatures and switch faster than silicon-based components. SiC, on the other hand, is gaining traction in EV power electronics, enabling more efficient energy conversion and reducing the size and weight of battery systems.

Another promising material is graphene, a single layer of carbon atoms arranged in a hexagonal lattice. Graphene exhibits exceptional electrical conductivity, thermal conductivity, and mechanical strength, making it a potential replacement for copper interconnects in chips. Copper interconnects suffer from increased resistance and power loss as chip features shrink, but graphene could reduce these issues, enabling faster signal transmission and lower power consumption. However, challenges in large-scale graphene production and integration into existing manufacturing processes have hindered its commercial adoption.